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Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, an

Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, an
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  • 10474671


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1.                   Introduction


2.                   Basic Properties of Metals in Semiconductors (20 p) 

2.1                 Diffusivity

2.2                 Solubility

2.3                 Segregation

2.4                  Precipitation and Gettering

2.5                 Electrical Properties

2.5.1        Shockley Read Hall Model

2.5.2           Activation Energy

2.5.3           Lifetime and capture cross-section

2.5.4           Leakage current


3.                  Sources of Metals in Si and Ge Processing (40 p)

3.1            Crystal Growth

3.1.1        Micro-electronics grade crystalline substrates

3.1.2        Substrates for PV applications

3.2              Wafer Handling

3.3               Wafer Cleaning

3.4              Lithography and Patterning

3.4.1        Resist Processing and Stripping

3.4.2        Wet Etching

3.4.3        Dry Etching

3.5              Ion Implantation

3.6        Thermal Processing

3.6.1         Diffusion processes

3.6.2         Gate Dielectrics

3.6.3         Deposition Techniques

3.7              Silicidation and Metallization

3.8              Chemical Mechanical Polishing

3.9              Through Silicon Vias Processing


4.              Characterization and Detection of Metals in Silicon and Germanium (30 p)

4.1           Chemical Techniques

4.1.1.       Electron Spin Resonanc<

4.1.2.       SIMS and TOFSIMS

4.1.3.        X-ray analysis (TXRF/EDX)

4.1.4.         Neutron Activation Analysis

4.1.5.         Structural Charactization (precipitates):

4.2.1           Scanning and transmission Electron Microscopy (SEM -TEM)

4.2.2           Optical Spectroscopy (AFM) & Defect Etching  (haze test)

4.2.3            Scanning PL technique

4.3                 Electrical Characterization

4.3.1              Hall Effect versus Temperature

4.3.2              Deep-Level Transient Spectroscopy (DLTS);

4.3.3               Lifetime Measurements  MOS Zerbst Technique   Surface Photo Voltage (SPV)  Microwave Absorption Analysis (MWA)  Electrolytic Methods (Elymat)  Ion drift studies

4.4                 Metal Contamination analysis methodology


5.      Electrical activity of Metals in Si and Ge (50 p)

5.1                    Properties of Fe (DLTS levels and lifetime)

5.2                    Properties of Cu

5.3                    Properties of Ni

5.4                    Properties of other TM (Ti, Co, Cr, Mn,..)

5.5                    Properties of Au, Pt and Ag

5.6                    Properties of Refractory Metals (Mo, W,...)

5.7                    Properties of Rare Earths


6.      Impact of metals on silicon devices and circuits (30 p)


6.1            P-n junction leakage and Lifetime Control

6.2            MOS Interface States and Dielectric Breakdown

6.3            Reliability Aspects

6.4            Charge Coupled Devices (CCDs) and CMOS Imagers

6.5            Solar Cell Efficiency

6.6            Impact on Circuit Yield


7.      Gettering and Passivation of Metals in Silicon and Germanium (30 p)

7.1            Gettering Strategies 

7.4             Back Damage Gettering

                  7.4.1   Mechanical Stress (poly-Si, Si3N4, sandblasting, high doping layer)

                  7.4.2   Ion Implantation

7.5             Front Side Gettering

                  7.5.1   Ion Implantation

                  7.5.2   Proximity Gettering

                  7.5.3   Nano Cavities

7.6             Al Gettering

7.7             Hydrogen Passivation of Metals


8.      Modeling and Simulation of Metals in Silicon and Germanium (15 p)

8.1             First Principles Analysis

8.2.            Density Functional Theory (DFT)

8.3             Modeling/Simulation Metals

8.4             Gettering Simulation




Breite: 165
Gewicht: 870 g
Höhe: 243
Länge: 32
Seiten: 438
Sprachen: Englisch
Autor: Cor Claeys, Eddy Simoen


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