Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, an

1.                   Introduction

References

2.1                 Diffusivity

2.2                 Solubility

2.3                 Segregation

2.4                  Precipitation and Gettering

2.5.1        Shockley Read Hall Model

2.5.2           Activation Energy

2.5.3           Lifetime and capture cross-section

References

3.1            Crystal Growth

3.1.1        Micro-electronics grade crystalline substrates

3.1.2        Substrates for PV applications

3.2              Wafer Handling

3.3               Wafer Cleaning

3.4              Lithography and Patterning

3.4.1        Resist Processing and Stripping

3.4.2        Wet Etching

3.4.3        Dry Etching

3.5              Ion Implantation

3.6        Thermal Processing

3.6.2         Gate Dielectrics

3.6.3         Deposition Techniques

3.7              Silicidation and Metallization

3.9              Through Silicon Vias Processing

References

4.              Characterization and Detection of Metals in Silicon and Germanium (30 p)

4.1           Chemical Techniques

4.1.1.       Electron Spin Resonanc<

4.1.2.       SIMS and TOFSIMS

4.1.3.        X-ray analysis (TXRF/EDX)

4.1.4.         Neutron Activation Analysis

4.1.5.         Structural Charactization (precipitates):

4.2.1           Scanning and transmission Electron Microscopy (SEM -TEM)

4.2.2           Optical Spectroscopy (AFM) & Defect Etching  (haze test)

4.2.3            Scanning PL technique

4.3.1              Hall Effect versus Temperature

4.3.2              Deep-Level Transient Spectroscopy (DLTS);

4.3.3               Lifetime Measurements

4.3.3.1  MOS Zerbst Technique

4.3.3.3  Microwave Absorption Analysis (MWA)

4.3.3.4  Electrolytic Methods (Elymat)

4.4                 Metal Contamination analysis methodology

References

5.      Electrical activity of Metals in Si and Ge (50 p)

5.1                    Properties of Fe (DLTS levels and lifetime)

5.2                    Properties of Cu

5.3                    Properties of Ni

5.6                    Properties of Refractory Metals (Mo, W,...)

5.7                    Properties of Rare Earths

References

6.      Impact of metals on silicon devices and circuits (30 p)

6.1            P-n junction leakage and Lifetime Control

6.2            MOS Interface States and Dielectric Breakdown

6.3            Reliability Aspects

6.4            Charge Coupled Devices (CCDs) and CMOS Imagers

6.5            Solar Cell Efficiency

6.6            Impact on Circuit Yield

References

7.4             Back Damage Gettering

                  7.4.1   Mechanical Stress (poly-Si, Si₃N₄, sandblasting, high doping layer)

7.5             Front Side Gettering

                  7.5.2   Proximity Gettering

                  7.5.3   Nano Cavities

7.6             Al Gettering

7.7             Hydrogen Passivation of Metals

References

8.      Modeling and Simulation of Metals in Silicon and Germanium (15 p)

8.1             First Principles Analysis

8.2.            Density Functional Theory (DFT)

8.3             Modeling/Simulation Metals

8.4             Gettering Simulation

References

Conclusions