Treatise on Solid State Chemistry: Volume 6B Surfaces II

of Volume 6B.- 1 Catalysis by Solid Surfaces.- 1. Introduction.- 2. Historical Development of the Understanding of Catalysis.- 2.1. A Chronology.- 2.2. The Steady-State Surface of the Catalyst.- 2.3. The Surface Complex: Relation of Heterogeneous Catalysis to Coordination Chemistry.- 2.4. The Role of d Electrons in Catalysis.- 3. The Nature of Heterogeneous Catalysts.- 3.1. Character and Use of Catalysts.- 3.2. Catalyst Characterization: Surface Area and Dispersion Measurements.- 3.3. The Measurement of Catalytic Activity.- 3.4. Active Site Character and Measurement.- 4. The Modern Theory and Spectroscopy of Chemisorption.- 4.1. First-Principles Theories.- 4.2. Empirical and Semiempirical Methods.- 4.3. Spectroscopy of Surface Molecules and Localized Orbitals at Surfaces.- 4.4. Long-Range Electron Interactions in the Surface Region.- 5. Electronic Effects in Catalysis.- 5.1. The "Electronic Factor" in Catalysis by Pure Metals.- 5.2. The "Electronic Factor" in Catalysis by Alloys.- 5.3. Electronic Effects in Carbides.- 5.4. Electronic Effects in Catalysis by Semiconductors.- 6. Geometrical Effects in Catalysis.- 6.1. Correlations between Kinetics and Surface Structure of Metallic Catalysts.- 6.2. Recent Investigations of Small Catalyst Particles.- 6.3. Stereochemical Methods as an Aid to the Determination of Catalytic Mechanisms.- 7. Reduction and Enhancement of Catalytic Activity: Poisons and Promoters.- 7.1. Catalyst Deactivation.- 7.2. Enhancement of Catalytic Activity: Promoters.- 8. Recent Examples of Catalytic Research on Well-Defined Surfaces.- 8.1. Catalytic Decomposition of Ammonia on Tungsten Single Crystals.- 8.2. Oxidation of Carbon Monoxide by Platinum.- 8.3. Decomposition of Formic Acid by Metals.- 9. Concluding Remarks.- Acknowledgment.- References.- 2 Ion Implantation and Channeling.- 1. Introduction.- 2. Channeling Effect Measurements.- 2.1. General Principles.- 2.2. Lattice Location of Implanted Atoms.- 2.3. Disorder.- 2.4. Beam Effects and Sensitivity.- 3. Implantation in Silicon.- 3.1. Range Distributions.- 3.2. Disorder Distributions.- 3.3. Production and Annealing of Disorder.- 3.4. Lattice Location of Implanted Atoms.- 3.5. Electrical Effects in Ion-Implanted Layers in Silicon.- 4. Compound Semiconductors.- 4.1. Introduction.- 4.2. Ranges.- 4.3. Radiation Effects and Lattice Disorder.- 4.4. Production and Anneal of Lattice Disorders.- 4.5. Compound Semiconductors-Lattice Location.- 4.6. GaAs-Electrical Measurements.- 4.7. Photoluminescence in GaP.- 4.8. Summary.- 5. High-Dose Implantation and Compound Formation.- 5.1. Silicon.- 5.2. Implantation in Metal Films.- 5.3. Implantation in Metals.- 6. Bombardment Effects.- Acknowledgment.- References.- 3 Semiconductor Surfaces.- 1. Introduction.- 2. Surface States at the Semiconductor Surface.- 2.1. The Surface State Description of Redox Reactions.- 2.2. Quantum-Mechanical Description of Surface States.- 2.3. Semiclassical Description of Surface States.- 2.4. The Chemical Behavior of Surface States.- 2.5. Adsorbed Gases as Surface States.- 3. The Double Layer at the Semiconductor Surface.- 3.1. The Role of the Surface Double Layer in Physical and Chemical Processes.- 3.2. The Solution of Poisson's Equation for the Double Layer.- 3.3. Electron Transfer to Surface States.- 4. Measurement Methods and Observations.- 4.1. Measurement of the Surface Double Layer.- 4.2. Measurement of Surface State Energy Levels.- 5. Kinetics of Electron and Hole Reactions.- 5.1. Electron-Hole Recombination.- 5.2. Hole Capture, Oxidation of Molecules by Holes.- 5.3. Electron Capture, Reduction of Molecules by Electrons.- 5.4. Electron and Hole Injection from Foreign Species.- References.- 4 The Role of the Solid in Electrochemical Phenomena.- 1. Introduction.- 2. The Electrode/Solution Interface.- 2.1. The Inner and Outer Potentials.- 2.2. Potential Distribution and Capacity of the Interface.- 2.3. The Potential of Zero Charge for Metal Electrodes.- 3. Current-Potential Relation of