Atomic Layer Deposition for Semiconductors

I.IntroductionChapter 1. Introduction; Cheol Seong Hwang and Cha Young Yoo (Seoul National University and Samsung)II.FundamentalsChapter 2 . ALD Precursors and Reaction mechanism ; Roy Gordon (Harvard)Chapter 3 . ALD simulations; Simon Elliott (Tyndall)III.ALD for memory devicesChapter 4 . ALD for mass-production memories (DRAM and Flash); Cheol Seong Hwang, Seong Keun Kim, and Sang Woon Lee (SNU)III-2. ALD for emerging memories Chapter 5 . PcRAM; Mikko Ritala and Simone Raoux (Helsinki and T. J. Watson IBM)Chapter 6 .FeRAM; Susanne Hoffmann and Takayuki Watanabe (Juelich and Canon)IV.ALD for logic devices Chapter 7.Front end of the line process; Jeong Hwan Han, Moonju Cho, Annelies Delabie, Tae Joo Park, and Cheol Seong HwangChapter 8. Back end of the line; Hyung Joon Kim, Han-Bo-Ram Lee, and Soohyun Kim (Yonsei and Youngnam University)V.ALD machinesChapter 9. Equipment for Atomic Layer Deposition for Semiconductor Manufacturing; Schubert Chu