The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
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- Artikel-Nr.: 10415849
Beschreibung
Thermal Oxidation Mechanisms and Modeling: Silicon Oxides and Oxidation; A.M. Stoneham. Novel Oxidation Methods and Characterization: New Approach to Chemically Enhanced Oxidation; R.J. Jaccodine. Deposition and Properties of SiO 2 : Low Temperature Synthesis and Characterization of Silicon Dioxide Films; G.S. Chakravarthy, et al. Chemical Properties of Si Surfaces Related to Oxidation and Oxide Deposition: Pre-Gate Oxide Si Surface Control; M. Morita, T. Ohmi. Chemical, Structural, and Microroughness Effects at the SiSiO 2 Interface: Dependence of Surface Microroughness on Types of Silicon Substrates; T. Ohmi, et al. Novel Structures, Processes, and Phenomena: Properties of Simox and Related Systems; S. Cristoloveanu, T. Ouisse. Defects and Hot-Carrier Induced Damage in SiSiO 2 Systems: Radiation and Hydrogen Induced Effects in Silicon-Silicon Dioxide Systems. 56 additional articles. Index.
Eigenschaften
Gewicht: | 1207 g |
Höhe: | 254 |
Seiten: | 503 |
Sprachen: | Englisch |
Autor: | B. E. Deal, C. R. Helms |
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