Zinc Oxide - A Material for Micro- and Optoelectronic Applications: Proceedings of the NATO Advanced
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Lieferzeit: 21 Werktage
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Beschreibung
Contributing Authors. Preface. Part I: ZnO bulk and layer growth: The Scope of Zinc Oxide Bulk Growth; R. Triboulet et al. Growth Mechanism of ZnO Layers; A.Kh. Abduev et al. Kinetics of High-Temperature Defect Formation in ZnO in the Stream of Oxygen Radicals; M.B. Kotlyarevsky et al. Part II: Electrical, Optical, and Structural Properties: Electrical Properties of ZnO; David C. Look et al. Electrical Properties of ZnO Thin Films and Single Crystals; M. Grundmann et al. Structure, Morphology, and Photoluminescence of ZnO Films; V.A. Karpina. Optics and Spectroscopy of Point Defects in ZnO; Vladimir Nikitenko. Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals; T. Nobis et al. Properties of Dislocations in Epitaxial ZnO Layers Analyzed by Transmission Electron Microscopy; E. Muller et al. Part III: Role of Hydrogen: Muon Spin Rotation Measurements on Zinc Oxide; E.A. Davis. Hydrogen Donors in Zinc Oxide; M.D. McCluskey and S.J. Jokela.Hydrogen-Related Defects in Zno Studied by JR Absorption Spectroscopy; E.V. Lavrov et al. Influence of the Hydrogen Concentration on H Bonding in Zinc Oxide; N.H. Nickel. Part IV: Fundamental properties: Valence Band Ordering and Magneto-Optical Properties of Free and Bound Excitons in ZnO; A.V. Rodina et al. Fundamental Optical Spectra and Electronic Structure of Zno Crystals; V. Val et al. Photo-Induced Localized Lattice Vibrations in ZnO Doped with 3d Transition Metal Impurities; Alexey Kislov. Part V: Device applications: ZnO Window Layers for Solar Cells; W. Fuhs. ZnO/AlGaN Ultraviolet Light Emitting Diodes; E.V. Kaunina et al. ZnO Transparent Thin-Film Transistor Device Physics; J.F. Wager. Zinc Oxide Thin Film Transistors; E. Fortunato et al. Index
Eigenschaften
Breite: | 160 |
Gewicht: | 820 g |
Höhe: | 240 |
Seiten: | 240 |
Sprachen: | Englisch |
Autor: | Evgenii Terukov, Norbert H. Nickel |
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