Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
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Beschreibung
Preface
Part 1: Materials Issues and Reliability of Optical Devices
1. Reliability Testing of Semiconductor Optical Devices
2. Failure Analysis of Semiconductor Optical Devices
3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication
4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation
5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes
6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers
7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes
8. InGaN Laser Diode Degradation
9. Radiation-enhanced Dislocation Glide - The Current Status of Research
10. Mechanism of Defect Reactions in Semiconductors
Part 2: Materials Issues and Reliability of Electron Devices
11. Reliability Studies in the Real World
12. Strain Effects in AlGaN/GaN HEMTs
13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors
14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors
15. Novel Dielectrics for GaN Device Passivation And Improved Reliability
16. Reliability Simulation
17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy
18. Reliability Study of InP-Based HBTs Operating at High Current Density
Index
Part 1: Materials Issues and Reliability of Optical Devices
1. Reliability Testing of Semiconductor Optical Devices
2. Failure Analysis of Semiconductor Optical Devices
3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication
4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation
5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes
6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers
7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes
8. InGaN Laser Diode Degradation
9. Radiation-enhanced Dislocation Glide - The Current Status of Research
10. Mechanism of Defect Reactions in Semiconductors
Part 2: Materials Issues and Reliability of Electron Devices
11. Reliability Studies in the Real World
12. Strain Effects in AlGaN/GaN HEMTs
13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors
14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors
15. Novel Dielectrics for GaN Device Passivation And Improved Reliability
16. Reliability Simulation
17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy
18. Reliability Study of InP-Based HBTs Operating at High Current Density
Index
Eigenschaften
Breite: | 156 |
Gewicht: | 1138 g |
Höhe: | 242 |
Seiten: | 616 |
Sprachen: | Englisch |
Autor: | Osamu Ueda, Stephen J. Pearton |
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