Photoelectric Effects In Semiconductors / Fotoélektricheskie Yavlena V. Poluprovodnikakh

I Phenomenological Description of Photoconductivity.-
1. Equilibrium and Nonequilibrium Carriers; Nonequilibrium Conductivity.-
2. Some Characteristics of Equilibrium Conductivity.-
3. Energy Distribution of Nonequilibrium Carriers.-
4. Lifetime of Nonequilibrium Carriers.-
5. Relaxation of Nonequilibrium Conductivity.- A. Linear Recombination.- B. Quadratic Recombination.- C. Instantaneous Value of the Lifetime.-
6. Photoconductivity of Finite Samples.- II Methods of Measuring Steady-State Photoconductivity.-
7. Methods Using Continuous and Modulated Illumination.-
8. Calculation of Photoconductance from Experimental Data.- A. Constant-Field Regime.- B. Constant-Current Regime.- C. Maximum-Sensitivity Regime.- D. Case of Weak Relative Photoconductance.-
9. Sensitivity Threshold.- 10. Optimum Sample Dimensions for Photoconductance Measurement.-
11. Elimination of the Influence of Contacts.- A. Criterion for the Elimination of the Influence of Neutral Contacts.- B. Probe Method for Measuring Photoconductance.-
12. Elimination of the Influence of Nonuniformity of Illumination.- III Determination Of The Principal Phenomenological Parameters ? and ? From Studies of Photoconductivity Kinetics.-
13. Frequency Dependence of Photoconductivity.- A. Square Modulation of Light Intensity.- 1. Symmetric Square Light Waves.- 2. Asymmetric Square Light Waves (t0i?t0d).- B. Sinusoidal Modulation of Light Intensity.-
14. Determination of the Lifetime by the Phase-Shift Compensation Method.- A. Sinusoidal Modulation.- B. Square Modulation.- C. Sensitivity of the Phase-Shift Compensation Method.-
15. Investigation of Relaxation in the Nonlinear Case.-
16. Some Methods of Modulating the Light-Beam Intensity.- IV Processes of Generation of Nonequilibrium Carriers.-
17. Internal Photoeffect (Excitation Due to Absorption of Light).-
18. Ionization by High-Energy Quanta and Particles.-
19. Other Methods of "Generating" Nonequilibrium Carriers.- A. Use of "Nonneutral" Contacts.- B. Formation of Nonequilibrium Carriers by Impact Ionization.- V Recombination through Simple Local Centers.-
20. Introduction. Limitations Imposed by the Laws of Conservation of Energy and Momentum.-
21. Recombination through Local Centers (Traps). Capture of Carriers by Local Centers.-
22. Semiconductor with One Type of Trap.-
23. System with One Type of Trap. Steady-State Case.- A. The Case of Low Trap Concentration.- B. The Case of Arbitrary Trap Concentration.- C. Conclusions.-
24. The Case of Several Types of Trap.-
25. Relaxation of Nonequilibrium Conductivity.- A. Low Trap Concentration.- B. High Trap Concentration.- VI Processes of Nonequilibrium Carrier Trapping.-
26. Recombination Centers and Trapping Centers.- A. Demarcation Levels.- (i) Unipolar Photoconductivity.-
27. Influence of Trapping Levels on Steady-State Characteristics and on the Relaxation of Nonequilibrium Conductivity (Low Degree of Population of the Trapping Levels-Linear Case).- A. Relaxation in the Presence of ?-Type Trapping Centers.- B. Relaxation in the Presence of ?-Type Trapping Centers.- C. Criterion for Distinguishing ? and ? Trapping.-
28. Influence of ? Trapping on the Phenomenological Yield and Lifetime in the General Case of Arbitrary Population of the Trapping Levels.-
29. Influence of Steady Illuminationen the Relaxation of Photoconductivity in the Presence of ?-Trapping.- (ii) Ambipolar Photoconductivity.-
30. Influence of Trapping Levels on Steady-State Photoconductivity and Steady-State Lifetimes of Electrons and Holes.-
31. Influence of Trapping Levels on the Relaxation OI Non-equilibrium Ambipolar Conductivity.- (iii) "Nonlinear" Relaxation Processes in the Case of High Degree of Population of the Trapping Levels.-
32. Influence of High Degree of Population of the Trapping Levels on the Initial Stages of Photoconductivity Rise.-
33. Influence of Trapping Levels on the General Nature of the Photoconductivity Relaxation Curves.-
34. Conclusions.- VII