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Computational Electronics: Semiconductor Transport and Device Simulation


Computational Electronics: Semiconductor Transport and Device Simulation
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Lieferzeit: 21 Werktage

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Beschreibung

Device Simulation for Silicon ULSI.- Drift-Diffusion Systems: Variational Principles and Fixed Point Maps for Steady State Semiconductor Models.- Drift-Diffusion Systems: Analysis of Discretized Models.- Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device Using High-Order Upwind Methods.- Adaptive Mesh Refinement for 2-D Numerical Analysis of Semiconductor Devices.- Adaptive Grids for Semiconductor Modelling.- A Numerical Large Signal Model for the Heterojunction Bipolar Transistor.- The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot.- A New Technique for Including Overshoot Phenomena in Conventional Drift-Diffusion Simulators.- A Self-Consistent Calculation of Spatial Spreading of the Quantum Well in HEMT.- A New Nonparabolic Hydrodynamic Model with Quantum Corrections.- The Conditions of Device Simulation Using Full Hydrodynamic Equations.- Device Simulation Augmented by the Monte Carlo Method.- Ensemble Monte Carlo Simulation of Femtosecond Laser Excitation in Semiconductors.- Dynamics of Photoexcited Carriers in GaAs.- The DAMOCLES Monte Carlo Device Simulation Program.- Iterative Spectral Solution of Boltzmann's Equation for Semiconductor Devices.- Computer Experiments for High Electron Mobility Transistors and Avalanching Devices.- Minority Electron Transport Across Submicron Layers of GaAs and InP.- Photoconductive Switch Simulation with Absorbing Boundary Conditions.- Simulation of Sub-Micron GaAs MESFETs for Microwave Control.- Eigenvalue Solution to Steady-State Boltzmann Equation.- Variable Threshold Heterostructure FET Studied by Monte Carlo Simulation.- A Study of the Relaxation-Time Model based on the Monte Carlo Simulation.- Field Assisted Impact Ionization in Semiconductors.- Parallelization of Monte Carlo Algorithms in Semiconductor Device Physics on Hypercube Multiprocessors.- Comparative Numerical Simulations of a GaAs Submicron FET Using the Moments of the Boltzmann Transport and Monte Carlo Methods.- J-V Characteristics of Graded AlxGa1-xAs Heterojunction Barriers Using the Self Consistent Ensemble Monte Carlo Method.- Monte Carlo Simulation of Lateral Surface Superlattices in a Magnetic Field.- Quantum-Well Infrared Photodetectors: Monte Carlo Simulations of Transport.- Simulation of Non-Stationary Electron Transport Using Scattering Matrices.- Rigid Pseudo-Ion Calculation of the Intervalley Electron-Phonon Interaction in Silicon.- Numerical Study of High Field Transport in SiO2 with Traps: A Coupled Monte Carlo and Rate Equation Model.- Transient Monte Carlo Simulation of Heterojunction Microwave Oscillators.- Monte Carlo Simulations for Submicron InP Two-Terminal Transferred Electron Devices.- Monte Carlo Simulation of Low-Dimensional Nanostructures.- Many-Body Effects and Density Functional Formalism in Nanoelectronics.- Modeling InAs/GaSb/AlSb Interband Tunnel Structures.- Quantum Kinetic Theory of Tunneling Devices.- Transport in Electron Waveguides: Filtering and Bend Resistances.- Numerical Methods for the Simulation of Quantum Devices Using the Wigner Function Approach.- Density Matrix Coordinate Representation Numerical Studies of Quantum Well and Barrier Devices.- A Distribution-Function Approach in the Many-Body Quantum Transport Theory of Quantum-Based Devices.- The Generalized Scattering Matrix Approach: An Efficient Technique for Modeling Quantum Transport in Relatively Large and Heavily Doped Structures.- Quantum Ray Tracing: A New Approach to Quantum Transport in Mesoscopic Systems.- On Transport in Heterostructures within the Independent-Particle Picture.- Transient Response in Mesoscopic Devices.- The Inclusion of Scattering in the Simulation of Quantum Well Devices.- Numerical Study of Electronic States in a Quantum Wire at Crossing Heterointerfaces.- Dissipative Quantum Transport in Electron Waveguides.- Exchange Energy Interactions in Quantum Well Heterostructures.

Eigenschaften

Breite: 155
Gewicht: 585 g
Höhe: 235
Länge: 19
Seiten: 268
Sprachen: Englisch
Autor: J. P. Leburton, Karl Hess, U. Ravaioli

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