Semiconductor Device Physics and Design

Acknowledgements. Preface. Introduction. 1 Structural Properties of Semiconductors. 1.1 INTRODUCTION. 1.2 CRYSTAL STRUCTURE. 1.3 LATTICE MISMATCHED STRUCTURES. 1.4 STRAINED EPITAXY:STRAIN TENSOR. 1.5 TECHNOLOGY CHALLENGES. 1.6 PROBLEMS. 1.7 FURTHER READING. 2 Electronic levels in semiconductors. 2.1 INTRODUCTION. 2.2 PARTICLES IN AN ATTRACTIVE POTENTIAL: BOUND STATES. 2.3 ELECTRONS IN CRYSTALLINE SOLIDS. 2.4 OCCUPATION OF STATES: DISTRIBUTION FUNCTION. 2.5 METALS AND INSULATORS. 2.6 BANDSTRUCTURE OF SOME IMPORTANT SEMICONDUCTORS. 2.7 MOBILE CARRIER. 2.8 DOPING OF SEMICONDUCTORS. 2.9 DOPING IN POLAR MATERIALS. 2.10 TAILORING ELECTRONIC PROPERTIES. 2.11 STRAINED HETEROSTRUCTURES. 2.12 DEFECT STATES IN SOLIDS. 2.13 TECHNOLOGY ISSUES. 2.14 PROBLEMS. 2.15 FURTHER READING. 3 Charge transport in materials. 3.1 INTRODUCTION. 3.2 CHARGE TRANSPORT:AN OVERVIEW. 3.3 TRANSPORT AND SCATTERING. 3.4 TRANSPORT UNDER AN ELECTRIC FIELD. 3.5 SOME IMPORTANT ISSUES IN TRANSPORT. 3.6 CARRIER TRANSPORT BY DIFFUSION. 3.7 CHARGE INJECTION AND QUASI-FERMI LEVELS. 3.8 CARRIER GENERATION AND RECOMBINATION. 3.9 CURRENT CONTINUITY(The law of conservation of electrons and holes separately). 3.10 PROBLEMS. 3.11 FURTHER READING. 4 Junctions in Semiconductors: P-N Diodes. 4.1 INTRODUCTION. 4.2 P-N JUNCTION IN EQUILIBRIUM. 4.3 P-N DIODE UNDER BIAS. 4.4 REAL DIODES: CONSEQUENCES OF DEFECTS AND CARRIER GENERATION. 4.5 REVERSE BIAS CHARACTERISITCS. 4.6 HIGH-VOLTAGE EFFECTS IN DIODES. 4.7 AVALANCHE BREAKDOWN IN A P-N JUNCTION. 4.8 DIODE APPLICATIONS:AN OVERVIEW. 4.9 LIGHT EMITTING DIODE (LED). 4.10 PROBLEMS. 4.11 DESIGN PROBLEMS. 4.12 FURTHER READING. 5 Semiconductor Junctions. 5.1 INTRODUCTION. 5.2 METAL INTERCONNECTS. 5.3 METAL SEMICONDUCTOR JUNCTION: SCHOTTKY BARRIER. 5.4 METAL SEMICONDUCTOR JUNCTIONS FOR OHMIC CONTACTS. 5.5 INSULATOR-SEMICONDUCTOR JUNCTIONS. 5.6 SEMICONDUCTOR HETEROJUNCTIONS. 5.7 PROBLEMS. 5.8 FURTHER READING. 6 Bipolar Junction Transistors. 6.1 INTRODUCTION. 6.2 BIPOLAR TRANSISTOR:A CONCEPTUAL PICTURE. 6.3 STATIC CHARACTERISTICS: CURRENT-VOLTAGE RELATION. 6.4 DEVICE DESIGN AND DEVICE PERFORMANCE PARAMETERS. 6.5 BJT DESIGN LIMITATIONS: NEED FOR BAND TAILORING AND HBTs. 6.6 SECONDARY EFFECTS IN REAL DEVICES. 6.7 PROBLEMS. 6.8 DESIGN PROBLEMS. 6.9 FURTHER READING. 7 Temporal Response Of Diodes and Bipolar Transistors. 7.1 INTRODUCTION. 7.2 MODULATION AND SWITCHING OF A P-N DIODE: AC RESPONSE. 7.3 TEMPORAL RESPONSE OF A SCHOTTKY DIODE. 7.4 BIPOLAR JUNCTION TRANSISTORS: A CHARGE-CONTROL ANALYSIS. 7.5 HIGH-FREQUENCY BEHAVIOR OF A BJT. 7.6 BIPOLAR TRANSISTORS: A TECHNOLOGY ROADMAP. 7.7 PROBLEMS. 7.8 DESIGN PROBLEMS. 8 Field Effect Transistors. 8.1 INTRODUCTION. 8.2 JFET AND MESFET: CHARGE CONTROL. 8.3 CURRENT-VOLTAGE CHARACTERISTICS. 8.4 HFETs: INTRODUCTION. 8.5 CHARGE CONTROL MODEL FOR THE MODFET. 8.6 POLAR MATERIALS AND STRUCTURES. 8.7 DESIGN ISSUES IN HFETS. 8.8 SMALL AND LARGE SIGNAL ISSUES AND FIGURES OF MERIT. 8.9 IMPLICATIONS ON DEVICE TECHNOLOGY AND CIRCUITS. 8.10 PROBLEMS. 8.11 DESIGN PROBLEMS. 8.12 FURTHER READING. 9 Field Effect Transistors: MOSFET. 9.1 INTRODUCTION. 9.2 MOSFET: DEVICES AND IMPACT. 9.3 METAL-OXIDE-SEMICONDUCTOR CAPACITOR. 9.4 CAPACITANCE-VOLTAGE CHARACTERISTICS OF THE MOS STRUCTURE. 9.5 MOSFET OPERATION. 9.6 IMPORTANT ISSUES AND FUTURE CHALLENGES IN REAL MOSFETS. 9.7 SUMMARY. 9.8 PROBLEMS. 9.9 DESIGN PROBLEMS. 9.10 FURTHER READING. 10 Coherent Transport and Mesoscopic Devices. 10.1 INTRODUCTION. 10.2 ZENER-BLOCH OSCILLATIONS. 10.3 RESONANT TUNNELING. 10.4 QUANTUM INTERFERENCE EFFECTS. 10.5 MESOSCOPIC STRUCTURES. 10.6 MAGNETIC SEMICONDUCTORS AND SPINTRONICS. 10.7 PROBLEMS. 10.8 FURTHER READING. A LIST OF SYMBOLS. B BOLTZMANN TRANSPORT THEORY. B.1 BOLTZMANN TRANSPORT EQUATION. B.2 AVERAGING PROCEDURES. C DENSITY OF STATES. D IMPORTANT PROPERTIES OF SEMICONDUCTORS.