Neutron-Transmutation-Doped Silicon

1: General Subjects.- Neutron Doped Silicon - A Market Review (Invited).- Large Scale Production of NTD-Silicon in The United States (Invited).- 2: Radiation Defects.- Impact of Defects Formed in Neutron Transmutation Doping of Silicon on Device Performance (Invited).- Electrical Property Studies of Oxygen in Czochralski-Grown Neutron-Transmutation-Doped Silicon (Invited).- Impurity Interactions with Structural Defects in Irradiated Silicon (Invited).- Defect Production During Neutron Doping of Si (Invited).- Wafer Stability. A Comparison of NTD-Silicon with Conventional FZ.- Electron Spin Resonance (ESR) Study on The Thermal Annealing of Defects Induced in Neutron Transmutation Doped Silicon.- Optical Studies of Lattice Damage in Neutron-Transmutation-Doped Silicon.- A Facility and Program at IPNS to Study Defects Produced by Fast Neutrons in Semiconductors.- Defects in Neutron-Irradiated Extrinsic P-Type Silicon.- 3. Irradiation Technology.- The Health and Safety Aspects of Neutron Doped Silicon (Invited).- Precision and Accuracy of NTD Silicon Production Based on Calorimetric Neutron Dose Control.- The Selection of Starting Material for Neutron-Transmutation Doped Silicon.- The Optimisation of Nuclear Parameters used for Silicon Irradiation in the Harwell Research Reactors.- Factors Affecting Phosphorus Production Rate in NTD Silicon.- Neutron Doped Silicon in Grenoble Reactor Facilities.- Characterization of NTD Silicon Irradiated in Grenoble Reactor Facilities.- A Preliminary Study on NTD-Silicon.- Development of the Irradiation Facilities for Silicon Neutron Doping in France.- Neutron Transmutation Doping of Silicon Slices.- 4. Device Design.- Characterization of Unijunction Transistors Fabricated on NTD-Silicon (Invited).- NTD Silicon Behaviour During Diffusion Heat Treatment and High Power Devices Optimization (Invited).- An Optimization of Blocking Characteristics of High Voltage Thyristors using NTD Crystal.- The Fabrication and Characterization of Spreading Resistance Temperature Sensors using NTD Silicon (Invited).- 5. Characterization.- Characterization of NTD Silicon Crystals by The Photoluminescence Technique (Invited).- Precision Resistivity Measurements on NTD-Silicon.- Photoluminescence Analysis of NTD-Silicon.- Quantitative Determination of B and P In Silicon by IR Spectroscopy.- 6. Special Topics.- Extrinsic NTD Silicon for Infrared Applications (Invited).- Impurity Doping and Isolation Processing by High Energy Electron Beam (Invited).- Application of NTD Silicon for Radiation Detector of Surface Barrier Type.- Neutron Transmutation Doping of GaAs.- Participants.