Microwave Semiconductor Devices

'1 Review of semiconductor physics and devices.- Energy bands.- Statistical properties of electrons and holes.- Carrier transport.- Carrier recombination and generation.- P-N-junctions.- Schottky barriers.- Reverse break-down.- Phonons.- References.- Further reading.- 2 Transferred electron devices (TED) - GUNN devices.- Electron transfer and negative differential mobility.- High-field dipole domains in GUNN devices.- Modes of operation of GUNN devices.- Indium phosphide transferred electron devices/ millimeter wave operation of TED's.- Example: Growth rate of a high-field dipole Domain - the "equal areas" rule.- Stationary domain at the anode.- Problems, Chapter 2.- References.- Further reading.- 3 IMPATT (Impact Avalanche Transit Time) devices.- Operation of IMPATT devices-physical discussion.- Small-signal theory of IMPATT device impedance.- Estimate of the power conversion efficiency of IMPATT devices - a simple large signal model.- Doping profiles for IMPATT diodes.- An analytical large-signal model of IMPATT devices.- Non-steady state large signal models for IMPATT devices.- Problems, Chapter 3.- References.- Additional reading.- 4 Tunneling devices.- Tunnel diodes.- Resonant tunneling devices.- Problems, Chapter 4..- References.- Further reading.- 5 Fundamental limitations on power output from solid-state microwave devices.- The thermal limit.- The electronic limit.- Measured data for rf power.- Problems, Chapter 5.- References.- 6 Basic properties and circuit aspects of oscillators and amplifiers based on two-terminal devices.- A basic oscillator model.- Injection locking of oscillators.- Model for FM- and AM-noise in oscillators.- Actual noise observed in two-terminal solid state devices.- Electronic tuning of solid state oscillators.- Examples of actual circuits and impedance diagrams for GUNN and IMPATT oscillators.- Negative resistance devices used as amplifiers.- Problems, Chapter 6.- References.- Further reading.- 7 Power-combining.- Chip-level power-combining.- Circuit level power combining.- Spatial (quasi-optical) power-combining.- Problems, Chapter 7.- References.- Further reading.- 8 Review of noise processes and noise concepts relevant to microwave semiconductor devices.- Thermal noise - noise figure and equivalent noise temperature.- Shot noise.- Diffusion noise.- Flicker noise, or 1/F-noise.- References.- Further reading.- 9 Diode applications to microwave frequency conversion and control.- Frequency-conversion devices.- Semi-conductor diode detectors.- Schottky barrier diodes.- Semi-conductor diode mixers: intrinsic conversion loss.- Parasitic element effects in semiconductor mixers.- Noise figure/noise temperature of mixer receivers.- Other types of mixers.- Noise temperature versus frequency for mixers.- Varactor harmonic multipliers.- PIN diodes and microwave control devices.- Problems, Chapter 9.- References.- Further reading.- 10 MESFET Devices.- I-V-characteristics of MESFETs.- Small-signal equivalent circuit model.- Ultra-fast electrons, or how ballistic can an electron be.- The Fukui noise model for MESFETs.- The Pucel-Haus-State noise model.- Noise in FET oscillators.- Power-frequency limitations in MESFETs.- Overview.- Problems, Chapter 10.- References.- Further reading.- 11 HFETs - Heterojunction Field Effect Transistors.- Discussion of the I-V-characteristics of a HFET.- Transconductance and cut-off frequencies for HFETs.- Indium-based heterostructures for HFETs.- Microwave equivalent circuit for HFETs.- Noise modeling of HFETs - comparison with MESFETs.- Review of noise data for HFETs and MESFETs.- HFET power amplifiers.- HFET oscillators.- Overview.- Problems, Chapter 11.- References.- Further reading.- 12 Bipolar microwave transistors.- Basic relations for microwave BJTs.- Equivalent circuit of the BJT - frequency-performance.- Noise modeling of BJTs.- BJT power amplifiers and oscillators.- H