Semiconductor Nanophotonics: Materials, Models, and Devices

Introduction

(Kneissl)

 

PART A: Semiconductor Nanostructures

(Hoffmann)

 

1. Submonolayer Quantum Dots

(Owschimikow, Pohl, Schliwa, Strittmatter, Eisele Dähne, Lehmann, Niermann, Herzog, Lignau)

1. Carrier localization in Submonolayer Quantum Dots

b.      Epitaxy of SML QDs

c.       Structure of Submonolayer Depositions

d.      Static and Dynamic Optical and Electronic Properties of SML QDs

e.      Devices based on SML Quantum dots

f.        Conclusion and Perspectives

 

1. Stressor-Induced Site Control of Quantum Dots for Single-Photon Sources

(Pohl, Schliwa, Strittmatter, Niermann, Lehmann, Kantner, Wünsche Bandelow, Koprucki)

Stressor-Induced Nucleation of Quantum Dots
1. Simulation of Strain in Semiconductors
2. Nucleation Control by a Buried Aperture Stressor
3.  Strain Measurements by means of Electron Holography
4. Single-Photon Source based on Stressor-Induced QD Site Control

f.        Realization of an efficient current Injection into a single site-controlled quantum dot

g.      Conclusion and Perspectives

 

1. Coherent and incoherent dynamics in quantum dots and nanophotonic devices

(Lüdge, Owschimikow, Lingnau, Kolarczik, Woggon, Vladimirov, Pimenov, Wolfrum, Meinecke)

1. Introduction
2. Ultrafast carrier dynamics in semiconductors with reduced dimensionality: Quantum-dots, submonolayer QDs and crossed excitons
3.  Quantum state tomography and dynamics of Wigner functions
4.  Dynamics and timing jitter in multisection mode-locked laser diodes
5. Conclusion and Outlook

 

1. Optical and Structural Properties of Nitride based Nanostructures

(Hoffmann, Christen, Wagner, Bertram, Maultzsch, Eisele)

1. Introduction

b.      Modern tools for nanostructure characterization

c.       Analysis of nanostructure growth in nitrides

d.      Optical analysis of low-dimensional nitrides

e.      Conclusion and Perspectives

 

1. Theory of spectroscopy and light emission of semiconductor nanostructures

(Knorr, Kuhn, Selig, Camele, Richter)

1. Introduction
2. State of the art of microscopic description of quantum dots and atomically thin semiconductors
3. Coupled quantum dot-cavity structures
4. Radiative emission of confined many particle configurations
5. Intraband transitions between bound QD states and states of the host medium
6. Two-dimensional spectroscopy in semiconductor nanostructures
Conclusion and Outlook

 

PART B: Nanophotonics Devices

(Kneissl, Reitzenstein)

 

1. Multi-Dimensional modelling and simulation of nanophotonic devices

(Bandelow, Koprucki, Burger, Kantner, Wünsche, Mielke, Schmidt, Rotundo, Höhne)

a.      Introduction

b.      Statement of the problem

c.       Multispecies modelling of QD lasers

d.      Quantum-classical hybrid modelling of SPEs and nanolasers with few QDs

e.      Numerical methods for drift-diffusion

f.        Numerical methods for Maxwell equations

g.      Applications

h.      Conclusion and Outlook

 

1. Deterministic quantum devices for optical quantum communication

(Rodt, Burger, Koprucki, Kantner)

a.      Introduction

b.      Numeric modelling and optimization of quantum devices for the generation and distribution of single photons

c.       Deterministic fabrication technologies

d.      Quantum light sources based on deterministic quantum dot microlenses

e.      On-chip quantum circuits with deterministically-integrated quantum dots

f.        Conclusion and Outlook

 

1. Quantum networks based on single photons

(Rödiger, Perlot, Benson, Freund)

a.      Introduction

b.      Single Photon Generation & Manipulation

c.       Frequency Conversion of Quantum Light

d.      Single Photon Storage

e.      Quantum Communication

f.        Free-Space Quantum Link

g.      Conclusion and Outlook

 

1. Vertical-cavity surface-emitting lasers (VCSELs) for communication, sensing, and integration 

(Lott)

a.      Introduction

b.      State-of-the-art VCSELs

c.       VCSELs for communication

d.      VCSELs for sensing

e.      VCSELs for integration

f.        VCSEL frontiers

g.      Conclusion and Outlook

 

1. VCSEL-based silicon photonic interconnect technologies

(Seiler, Tillack, Zimmermann)

a.      Introduction

b.      State of the art interconnect technologies and requirements

c.       Long-wavelength VCSELs

d.      Characterization of 1.3µm and 1.55µm InP-VCSELs

e.      Modeling of VCSEL-based coherent interconnects

f.        VCSEL-based PAM transmission link

g.      VCSEL-based QPSK transmission link

h.      Conclusion and Outlook

 

1. Nitride microcavities for classical and non-classical light emitters

(Dadgar, Strittmatter, Betram, Schliwa, Hoffmann, Mautzsch, Christen, Wagner)

1. Introduction
Bragg mirrors, GaN quantum dots and microcavities
2. Microstructure and emission properties

d.      Towards devices

e.      Conclusion and Perspectives

 

1. Group III-nitride-based laser diodes

(Kneissl, Wernicke, Sulmoni, Kuhn, Weyers)

a.      State-of-the-art in group III-nitride laser diode technologies

b.      Design of AlGaN-based deep UV laser diodes

c.       Fabrication of AlGaN-based UV laser diodes

d.      Low defect density AlN templates

e.      Growth of AlGaN laser heterostructures

f.        Gain and losses in deep UV AlGaN lasers by optical pumping

g.      Development of current-injection deep UV laser diodes

h.      Conclusion and Outlook