Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Preface.- Memristive computing devices and applications.- Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication.- Modeling resistive switching materials and devices across scales.- Review of mechanisms proposed for redox based resistive switching structures.- Probing electrochemistry at the nanoscale: in situ TEM and STM characterizations of conducting filaments in memristive devices.- Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups.- SiO2 based conductive bridging random access memory.- Reset switching statistics of TaOx-based Memristor.- Effect of O2- migration in Pt/HfO2/Ti/Pt structure.- Operating mechanism and resistive switching characteristics of two- and three-terminal atomic switches using a thin metal oxide layer.- Interface-type resistive switching in perovskite materials.- Volume Resistive Switching in metallic perovskite oxides driven by the Metal-Insulator Transition.- Resistive states in strontium titanate thin films: Bias effects and mechanisms at high and low temperature.- Single crystalline SrTiO3 as memristive model system: From materials science to neurological and psychological functions.- Resistive switching memory using biomaterials.- Optical memristive switches.