III-V Compound Semiconductors and Devices: An Introduction to Fundamentals

Preface

PART I   SEMICONDUCTOR FUNDAMENTALS

Chapter 1.           Introduction

1.1          Historical Perspective

1.2          Future outlooks

Chapter 2.           Atomic bonding and crystal structure

2.1          Crystal structures and symmetry

2.2          Ionic bond and inter-atomic forces

2.3          Covalent bond and sp3 hybrid orbit

2.5          Reciprocal lattice, diffraction condition, and Brillouin zone

Chapter 3.           Electronic band structures of solids

3.1          Free electron theory and density of states

3.2          Periodic crystal structures and Bloch's theorem

3.3          Nearly free-electron approximation and energy gap

3.4          The Kronig-Penney model

3.5          Effective mass

PART II.                COMPOUND SEMICONDUCTOR MATERIALS

Chapter 4.           Compound semiconductor crystals

4.1          Structural properties

4.2          Electrical properties

4.3          Free carrier concentration and Fermi integral

4.4          Surface states in compound semiconductors

4.5          III-V compound semiconductors

Chapter 5.           Material technologies

5.1          Growth of bulk crystals

5.2          Epitaxy

5.3          Liquid phase epitaxy 

5.4          Vapor phase epitaxy

5.5          Molecular beam epitaxy

PART III.               PROPERTIES OF HETEROSTRUCTURES

6.1          Energy band alignment

6.2          Strained layer structures

6.3          Strain effect on band-edge energies

6.4          Band-edge energies in strained ternary and quaternary alloys

6.5          Stained nitrides with wurtzite crystal structure

6.6          Construction of heterostructure band diagrams

Chapter 7.           Electrical properties of compound semiconductor heterostructures

7.2          p-N Heterojunction under bias

7.3          Quantum well heterostructures

7.4          Superlattices and minibands

7.5          Heterostructures in electric fields

7.6          Polarization fields in wurtzite quantum wells

Chapter 8.           Optical properties of compound semiconductor heterostructures

8.1          Basic optical properties of dielectric medium

8.3          Radiative transitions between discrete states

8.4          Optical transitions between energy bands

8.5          Non-radiative Auger recombination processes

PART IV.               HETEROSTRUCTURE DEVICES

Chapter 9.           Heterostructure electronic devices

9.1          Metal-semiconductor field-effect transistors (MESFETs)

9.3          High-electron mobility transistor (HEMT) basics - A triangular quantum well approach

9.4          Operation properties of the HEMT

9.5          Optimal design of the HEMT

9.6          GaN-based HEMT structures

9.7          Heterojunction bipolar transistors (HBTs)

Chapter 10.         Semiconductor lasers and light-emitting diodes

10.1        Device physics of heterostructure lasers

10.3        Quantum-well laser

10.4        Vertical cavity surface emitting lasers

10.5        Light-emitting diodes (LEDs)

10.6        Unipolar intersubband quantum cascade (QC) lasers

10.7        Transistor lasers

Appendix

A.            Values of important physical constants

B.            Important physical properties of some indirect semiconductors

D.            Important physical properties of wurtzite III-nitride semiconductors

E.            Bandgap energy of III-V semiconductor ternary alloys

F.            Bandgap and polarization parameters of wurtzite III-nitride semiconductor ternary alloys