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Advances in Optoelectronic Materials


Advances in Optoelectronic Materials
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Chapter One:A STRUCTURAL AND OPTICAL LOOK AT FUNCTIONAL MATERIALSAuthor: Mustafa Kemal OzturkAbstract1.INTRODUCTION2.THEORICAL OPTICAL APPROACH TO FUNCTIONAL MATERIALS2.1.Kramers-Kronig Equations2.2. Optical properties of alloys2.3. Dielectric constants of alloys2.4. Refraction and absorbtion coefficients of Alloys2.5. Absorbtion coefficient2.6.Lost Function Calculation3.GROWTH TECHNIQUES OF FUNCTIONAL CRYSTAL MATERIALS3.1. Bulk Crystal Growing Techniques3.2. Bridgman Technique3.3. Czochralski Technique3.4. Kyropoulos Technique3.5. Molecular Beam Epitaxy (MBE) 3.6. Metal-Organic Chemical Vapor Deposition (MOCVD) 3.7. Chemical Vapor Deposition (CVD) 3.8. Vapor Phase Epitaxy (VPE) 3.9. Liquid Phase Epitaxy (LPE) 4.APPLICATIONS AND ANALYSIS METHODS OF FUNCTIONAL MATERIALS4.1. Scanning Electron Microscopy (SEM) 4.2. X-ray diffraction and spectroscopy techniques4.3 X-Ray Diffraction (XRD) 4.4 X- Ray Reflectivity (XRR) 4.6. X-Ray florescence (XRF) 4.7. Second Ion Mass Spectroscopy (SIMS) 4.8. Stress measurements4.9. Texture Calculation4.10. Small and Wide-Angle X-ray Scattering (SAXS and WAXS) 4.11. Atomic Force Microscopy (AFM) 4.12. Spectroscopic Elipsometry (SE) 4.13. Photoluminesance Spectroscopy (PL) 4.14. Raman Spectroscopy4.15. Fourier-transform infrared spectroscopy (FTIR) 4.16. Ultraviolet-visible spectroscopy (UV-Vis) 5.CONCLUSIONACKNOWLEDGEMENTS
Chapter Two: Two-Dimensional Materials for Next Generation Nanoelectronics and Optoelectronics: Advances and TrendsAuthor: Ling Zhi Peng
Abstract1.Introduction2.History - 2D materials 3.Underlying physics3.1Graphene3.2Hexagonal boron nitride3.3Molybdenum disulfide3.4Phosphorene4.Novel 2D device integration 4.1Graphene-based applications4.2Hexagonal boron nitride applications4.3Molybdenum disulfide applications4.4Black phosphorus applications4.5Flexible next-generation device integration - A complete 2D approach5.Progress towards commercialization6.ConclusionReferences
Chapter Three:An Ab-initio study of structural, elastic, electronic, vibration and optical properties of NaAlSi semiconducting compound  for optoelectronic applicationsAuthor: Yasemin Ö. Çiftci 
Abstract1.Introduction2.Method of calculation3.Results and discussion3.1 Structural and electronic properties3.2Elastic properties3.3Phonon dispersion curves3.4Optical properties4.Summary and conclusionReferences
Chapter Four: OPTOELECTRONIC PROPERTIES OF GaAs, GaP and ZnSe CATHODES IN A PLASMA-SEMICONDUCTOR STRUCTURES Author: Hatice Hilal Kurt
Abstract1.INTRODUCTION2.THEORY3.EXPERIMENTAL4.RESULT AND DISCUSSIONS5.CONCLUSIONSACKNOWLEDGEMENTSREFERENCES
Chapter Five:Optoelectronic Properties of ZnO Thin Films Prepared by the Spray Pyrolysis Method on Glass SubstratesAuthor: Shadia Jamil Ikhmayies
1.Abstract2.Introduction3.Micro Structure4.Transmittance and Absorbance5.Band Gap Energy 6.Refractive Index and Extinction Coefficient7.Dielectric Constant8.Photoluminescence9.ConclusionsReferencesChapter Six:
The Optical Properties of SnO2:F Thin Films Prepared by the Spray Pyrolysis Method on Glass SubstratesAuthor: Shadia Jamil Ikhmayies
1.Abstract2.Introduction3.Films' Preparation4.Transmittance and Absorbancea.Influence of Substrate Temperatureb.Influence of Film Thickness5.Bandgap Energy and Urbach Tailinga.Influence of Substrate Temperatureb.Influence of Film Thickness6.Refractive Index and Extinction Coefficients7.Dielectric Constant8.Optical Conductivity9.Energy Loss10.ConclusionsReferences
Chapter Seven: NO GAS SENSING PROPERTIES OF Zn1-XSnXO NANOSTRUCTURES UNDER UV LIGHT IRRADIATION Authors: Irmak Karaduman , Ali Orkun Çagirtekin , Tugba Çorlu , Memet Ali Yildirim , Aytunç Ates , Selim Acar
Abstract1.Introduction2.Different Producing Methods of ZnO Nanostructure Thin Films2.1Dopants in ZnO nanostructure thin films3.Gas Sensing Applications Using ZnO Nanostructure Thin Films3.1 The effect of operating temperature 3.2 The effect of surface morphology3.3 The effect of annealing process4.Experimental Details5.Results and Discussions1.1Structural analysis1.2Surface morphological analysis  1.3Compositional analysis  1.4Optical analysis6.UV light irradiation for gas sensing applications7.CONCLUSIONREFERENCES
Chapter Eight: Optical Refractive Properties, Birefringence and Order Paratemeter at the Direct Smectic A - Isotropic and Reverse Isotropic - Smectic A Phase Transitions Author: Arif Nesrullajev (Nesrullazade)
Abstract2.Introduction3.Theoretical Background4.Experimental4.1Materials4.2Samples4.3Methods5.Results and Discussion6.ConclusionReferences
Chapter Nine: CHARGE TRANSPORT MECHANISMS IN THE SILVER-MODIFIED-ZEOLITE POROUS MICROSTRUCTUREAuthor: Bakhtiyar Salamov
Abstract1.ELECTRO-OPTICAL PROPERTIES OF POROUS ZEOLITE CATHODE IN THE GAS DISCHARGE ELECTRONIC DEVICES FOR PLASMA LIGHT SOURCE APPLICATIONS2.NEW APPROACH FOR CHARGE TRANSPORT MECHANISMS IN THE ATMOSPHERIC PRESSURE COLD PLASMA DEVICE WITH POROUS ZEOLITE2.1The pressure-driven dc conduction mechanisms2.2The enhanced effect of electrical field on dc conduction2.3Stable discharge glow and optimal operation regions3.PECULIARITIES OF THE DIELECTRIC RESPONSE OF THE SILVER-MODIFIED-ZEOLITE POROUS MICROSTRUCTURE3.1Characterization of zeolite3.2Theoretical Model3.3The effect of the Ag concentration to the conduction3.4Peculiarities of the dielectric propertiesAcknowledgementsREFERENCES
Chapter Ten: Magnetoelectricity in Ion Implanted Ferroelectric CrystalsAuthor: F.A. Mikailzade
Abstract1.PHYSICAL PROPERTIES OF FERROICS AND MULTIFERROICS 1.1.Magnetoelectric effect1.2.Multiferroic materials1.3.Single phase multiferroics1.4.Composite multiferroics2.MATERIALS AND EXPERIMENTAL METHODS FOR INVESTIGATIONS OF THE NOVEL MULTIFERROIC COMPOSITES.2.1.Ferroelectric crystals for studies.2.2.Ion implantation technique2.3.Magnetic measurement techniques2.4.Dielectric constant measurements3.FERROMAGNETIC RESONANCE AND MAGNETIZATION STUDIES 3.1.Co implanted BaTiO3 crystal3.2.Fe implanted BaTiO3 crystal3.3.Co implanted TlInS2 and TlGaSe2crystals4.MAGNETOELECTRIC EFFECTS4.1.Co nad Fe implanted BaTiO3 crystal4.2.Co implanted TlInS2 and TlGaSe2 crystals5.CONCLUSIONACKNOWLEDGMENTREFERENCES

Eigenschaften

Breite: 155
Höhe: 235
Seiten: 276
Sprachen: Englisch
Autor: Hatice Hilal Kurt, Shadia Jamil Ikhmayies

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