Power GaN Devices: Materials, Applications and Reliability

1 Properties and advantages of gallium nitride; Daisuke Ueda.

2 Substrate issues and epitaxial growth; Stacia Keller.

3 GaN-on-Silicon CMOS compatible process; Denis Marcon.

4 Lateral GaN-based power devices; Umesh Mishra.

5 GaN-based vertical transistors; Srabanti Chowduri.

6 GaN-based nanowire transistors; Tomas Palacios.

7 Deep level characterization: electrical and optical methods; Robert Kaplar.

8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi.

9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni.<

10 Cascode configuration for normally-off devices; Primit Parikh.

11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda.

12 Fluorine implanted E-mode transistors; Kevin Chen.

13 Drift effects in GaN HV power transistors; Joachim Wuerfl.

14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee.

15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.