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The Physics of Semiconductor Devices, 2 Teile: Proceedings of IWPSD 2017


The Physics of Semiconductor Devices, 2 Teile: Proceedings of IWPSD 2017
299.00 CHF
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Lieferzeit: 21 Werktage

  • 10475682


Beschreibung

Enhanced Photodetection in Visible Region in rGo/GaN Based Hybrid Photodetector.- ZigZag Phosphorene Nanoribbons Antidot âEUR" Electronic structure and Device Application.- Calculation of Quantum Capacitance and Sheet Carrier Density of Graphene FETs.- Effect of Back Gate Voltage on Double Gate Single Layer Graphene Field-Effect Transistor with Improved ION.- Effects of chemical functionalization on single-walled carbon nanotubes by mild hydrogen peroxide for PV applications.- Effect of tip induced strain on nanoscale electrical properties of MoS2-Graphene heterojunctions.- Optimization of the concentration of molybdenum disulfide (MoS2) for formation of atomically thin layers.- Fabrication of 2D NEMS on flexible substrates for strain engineering in sensing applications.- Transition metal doped ZnS monolayer: The first principles insights.- Tuning Resonant Wavelength of Silicon Micro-ring Resonator with Graphene.- Diameter Dependent Band Gap Properties of Different Structures of Single-walled Carbon.-Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors.

Eigenschaften

Breite: 161
Gewicht: 2460 g
Höhe: 241
Länge: 87
Seiten: 1299
Sprachen: Englisch
Autor: D.S. Rawal, R. K Sharma

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